MOSFET N/P-CH 25V 500/410MA SC88 FDG6321C
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Description:
MOSFET N/P-CH 25V 500/410MA SC88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
FDG6321C(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2753,Price reference "real-time change" China/Hongkong。 FDG6321C package/specs, Download FDG6321C、Datasheet。